Download Advances in Non-volatile Memory and Storage Technology by Yoshio Nishi PDF

By Yoshio Nishi

New options are wanted for destiny thinning out of nonvolatile reminiscence. Advances in Non-volatile reminiscence and garage Technology offers an outline of constructing applied sciences and explores their strengths and weaknesses.

After an summary of the present industry, half one introduces advancements in flash applied sciences, together with advancements in 3D NAND flash applied sciences and flash reminiscence for ultra-high density garage units. half seems on the benefits of designing section switch reminiscence and resistive random entry reminiscence applied sciences. It appears to be like particularly on the fabrication, homes, and function of nanowire part switch reminiscence applied sciences. Later chapters additionally examine modeling of either steel oxide and resistive random entry reminiscence switching mechanisms, in addition to conductive bridge random entry reminiscence applied sciences. eventually, half 3 appears to be like to the way forward for substitute applied sciences. The parts coated contain molecular, polymer, and hybrid natural reminiscence units, and a number of random entry reminiscence units corresponding to nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive units.

Advances in Non-volatile reminiscence and garage Technology is a key source for postgraduate scholars and educational researchers in physics, fabrics technology, and electric engineering. it's a precious instrument for study and improvement managers fascinated with electronics, semiconductors, nanotechnology, solid-state stories, magnetic fabrics, natural fabrics, and conveyable digital devices.

  • Provides an summary of constructing nonvolatile reminiscence and garage applied sciences and explores their strengths and weaknesses
  • Examines advancements to flash expertise, cost trapping, and resistive random entry memory
  • Discusses rising units akin to these in accordance with polymer and molecular electronics, and nanoelectromechanical random entry reminiscence (RAM)

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